onsemi RFD3055LESM9A
$ 0.325
Production
Prix et stock
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Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | RFD3055LESM9A | 92 500 | 2500 | Tape & Reel | ||||||||
| Newark | RFD3055LESM9A | 1 767 | 1 | Cut Tape | ||||||||
| Master Electronics | RFD3055LESM9A | 4 600 | 100 | |||||||||
| Onlinecomponents.com | RFD3055LESM9A | 4 600 | 100 | Bulk | ||||||||
| DigiKey | RFD3055LESM9ACT-ND | 20 400 | 1 | Cut Tape |
Historique des stocks
Tendance sur 3 mois : +251%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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1 composant disponible
Modèles CAO
Téléchargez les symboles onsemi RFD3055LESM9A, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | Empreinte | 3D | Télécharger |
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Ce composant
Pièces de rechange
Price @ 1000
$ 0.325
$ 0.283
Stock
1,067,999
17,198
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
DPAK
-
Drain to Source Voltage (Vdss)
60 V
-
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
3 V
-
Rds On Max
107 mΩ
-
Gate to Source Voltage (Vgs)
16 V
-
Power Dissipation
38 W
48 W
Input Capacitance
350 pF
-
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
STMicroelectronicsSTD12NF06LT4
Automotive-grade N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a DPAK package
VishaySUD23N06-31-GE3
Mosfet; Power; N-ch; Vdss 60V; Rds(on) 0.025 Ohm; Id 25A; TO-252; Pd 50W; Vgs +/-20V; -55
Descriptions
Descriptions de onsemi RFD3055LESM9A fournies par ses distributeurs.
N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
N-Channel 60 V 0.107 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
N-CHANNEL LOGIC LEVEL POWER MOSFET Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:11mA; Package/Case:3-TO-251; Operating Temperature Range:-55°C to +175°C
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +251%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance107 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation38 W
Rds On Max107 mΩ
Resistance107 mΩ
Rise Time105 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité