onsemi MUN5311DW1T1G
$ 0.064
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5311DW1T1G | 18 000 | 3K | 9h | ||||||||
| Newark | MUN5311DW1T1G | 78 690 | 5 | Cut Tape | ||||||||
| Verical | MUN5311DW1T1G | 5 347 | 231 | |||||||||
| Arrow Electronics | MUN5311DW1T1G | 5 347 | 1 | |||||||||
| Future Electronics | MUN5311DW1T1G | 9 000 | 3K | Tape & Reel |
Historique des stocks
Tendance sur 3 mois : -24.41%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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1 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MUN5311DW1T1G.
Modèles CAO
Téléchargez les symboles onsemi MUN5311DW1T1G, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte |
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Ce composant
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Price @ 1000
$ 0.064
$ 0.055
Stock
8,368,203
2,569,790
Authorized Distributors
6
3
Mount
-
Surface Mount
Case/Package
SOT-363-6
-
Polarity
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
35
35
Power Dissipation
187 mW
150 mW
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
onsemiMUN5211DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
onsemiMUN5330DW1T1G
ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363
onsemiMUN5111DW1T1G
Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA, 10 kohm, 10 kohm
Descriptions
Descriptions de onsemi MUN5311DW1T1G fournies par ses distributeurs.
Dual Bias Resistor BJT NPN/PNP Transistor 50 Volt 100mA 6-Pin SOT-363
Bipolar Transistors (BJT); MUN5311DW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 50 V; 100 mA
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
R1=10 KILO OHM, R2=10 KILO OHM COMPLEMENTARY BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN5311DW1T1G NPN+PNP DIGI TRANSISTOR,100MA 50V 10 KOHM, RATIO OF 1,6-PIN SC-88
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Complementary Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 10K/10Kohm, Sc88, Full Reel; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5311DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -24.41%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN, PNP
Power Dissipation187 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MUN5311DW1T1G.
Conformité
Classification environnementale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité