onsemi MMUN2212LT1G
$ 0.034
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMUN2212LT1G | 90 000 | 3K | Tape & Reel | ||||||||
| Avnet | MMUN2212LT1G | 28 670 | 69K | 9h | ||||||||
| Newark | MMUN2212LT1G | 64 000 | 5 | Cut Tape | ||||||||
| Rochester Electronics | MMUN2212LT1G | 549 767 | 7h | |||||||||
| Verical | MMUN2212LT1G | 168 000 | 25211 |
Historique des stocks
Tendance sur 3 mois : -1.67%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MMUN2212LT1G.
Modèles CAO
Téléchargez les symboles onsemi MMUN2212LT1G, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | Empreinte | Télécharger | |
 Ultra Librarian | SymboleEmpreinte | Télécharger |
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Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 0.034
$ 0.048
$ 0.048
Stock
17,359,186
1,361,482
1,361,482
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
-
-
hFE Min
60
60
60
Power Dissipation
246 mW
-
-
Chaîne d'approvisionnement
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
onsemiMMUN2241LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
onsemiMMUN2211LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
onsemiMMUN2213LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Diodes Inc.DDTC114YCA-7-F
DDTC114YCA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
Diodes Inc.DDTC144ECA-7-F
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 47 kohm, 47 kohm
Diodes Inc.DDTC124ECA-7-F
NPN 200 mW 50 V 22 kO Surface Mount Pre-Biased Small Signal Transistor - SOT-23
Descriptions
Descriptions de onsemi MMUN2212LT1G fournies par ses distributeurs.
Bipolar Transistors (BJT); MMUN2212LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN Series 50 V 100 mA 22 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
MMUN2212LT1G NPN DIGI TRANSISTOR, 100MA 50 V 22 KOHM, RATIO OF 1, 3-PIN SOT-23
NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
NPN - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
Brt Transistor, 50V, 22K/22Kohm, Sot-23, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi MMUN2212LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -1.67%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageSOT-23-3
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min60
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi MMUN2212LT1G.
Conformité
Classification environnementale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité