onsemi HUF75329D3S

N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
$ 1.046
Obsolete
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HUF75329D3S1 175268
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi HUF75329D3S.

IHS

Datasheet10 pagesIl y a 24 ans

onsemi

Fairchild Semiconductor

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Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-09-23
LTD Date2011-03-23

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Descriptions

Descriptions de onsemi HUF75329D3S fournies par ses distributeurs.

N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
onsemi
Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.026ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes
Newark
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.
Fairchild Semiconductor

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Rochester Electronics

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