onsemi HGTG30N60C3D
$ 4.917
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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1 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi HGTG30N60C3D.
Modèles CAO
Téléchargez les symboles onsemi HGTG30N60C3D, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | Empreinte | 3D | Télécharger |
Le site partenaire s’ouvrira dans un nouvel onglet lorsque vous téléchargez ses modèles de CAO.
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Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 4.917
$ 2.73
Stock
138,467
18,889
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-247
-
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
63 A
63 A
Power Dissipation
208 W
-
Collector Emitter Saturation Voltage
1.5 V
-
Reverse Recovery Time
60 ns
-
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-08-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Pièces détachées
STMicroelectronicsSTGW39NC60VD
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsSTGW35NB60SD
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsSTGW30V60DF
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
InfineonAUIRGP4062D
600V Automotive UltraFast Copack Trench IGBT in a TO-247AC package, TO247COPAK-3, RoHS
InfineonIKW40N65H5FKSA1
650V DuoPack IGBT and Diode High speed switching series fifth generation
Descriptions
Descriptions de onsemi HGTG30N60C3D fournies par ses distributeurs.
600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
600 V, 63 A, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current63 A
Current Rating30 A
Element ConfigurationSingle
Fall Time275 ns
Max Collector Current63 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-40 °C
Number of Elements1
PolarityNPN
Power Dissipation208 W
Reverse Recovery Time60 ns
Rise Time45 ns
Schedule B8541290080
Turn-Off Delay Time320 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)600 V
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour onsemi HGTG30N60C3D.
Conformité
Classification environnementale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité