Descriptions de onsemi FQPF9N50C fournies par ses distributeurs.
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220FP Rail
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
44W(Tc) 30V 4V@ 250¦ÌA 35nC@ 10V 1individualNChannel 500V 800m¦¸@ 4.5A,10V 9A 1.03nF@25V TO-220F Through hole mounting 10.67mm*4.7mm*16.3mm
MOSFET, N, 500V, 9A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissi
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
MOSFET, N, TO-220F; Transistor Polarity:N; Max Current Id:5.3A; Max Voltage Vds:500V; On State Resistance:0.73ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:50W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220F; No. of Pins:3; SVHC 2:Cobalt dichloride; Case Style:TO-220F; Cont Current Id:5.3A; Power Dissipation Pd:50W; Pulse Current Idm:21A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)