onsemi FQPF6N60C

Mosfet N-ch 600V 5.5A TO-220F
$ 0.777
Obsolete
Page du fabricantFiche technique

Prix et stock

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQPF6N60C.

IHS

Datasheet10 pagesIl y a 22 ans
Datasheet0 pageIl y a 0 an

DigiKey

Fairchild Semiconductor

Farnell

iiiC

Historique des stocks

Tendance sur 3 mois:
Restocked

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13

Pièces détachées

onsemiFQPF5N60C
Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220F
onsemiFQPF7N65C
Power MOSFET, N-Channel, QFET®, 650 V, 7 A, 1.4 Ω, TO-220F
N-Channel Power MOSFET, UniFETTM II, 600V, 4.5A, 2Ω, TO-220F
STMicroelectronicsSTP6NK60ZFP
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP5NK60ZFP
N-CHANNEL 600V - 1.2 Ohm - 5A TO-220FP Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTP4NK60ZFP
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP

Descriptions

Descriptions de onsemi FQPF6N60C fournies par ses distributeurs.

MOSFET N-CH 600V 5.5A TO-220F
Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.5A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Alias du fabricant

onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd