onsemi FQA19N60

N-Channel Power MOSFET, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P
Obsolete
Page du fabricantFiche technique

Prix et stock

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DistributorSKUMinPkg
Microchip USAFQA19N60401150Bulk
14h
Win SourceWS-FQA19N605 9175
17h
Worldway ElectronicsFQA19N606 5367Tube
16h
Esaler ElectronicFQA19N60450
1d
AztechFQA19N60395
10h

Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FQA19N60.

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Technical Drawing1 pageIl y a 6 ans

Farnell

IHS

onsemi

Factory Futures

Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-26
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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STMicroelectronicsSTW20NM60FD
N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET
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STMicroelectronicsSTP20NM60FD
Transistor MOSFET N-CH 600V 20A 3-Pin (3+Tab) TO-220 Tube
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STMicroelectronicsSTP20NM60FP
N-Channel 600V - 0.25Ohm - 20A TO-220FP MDmesh™ POWER MOSFET
Détails

Descriptions

Descriptions de onsemi FQA19N60 fournies par ses distributeurs.

N-Channel Power MOSFET, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P
onsemi
Transistor FQA19N60 N-Channel QFET MOSFET 600V 18.5A TO-3PN
Jameco
N Channel 600 V 380 mO 300 W QFET Mosfet Flange Mount - TO-3PN
Future Electronics
Trans MOSFET N-CH 600V 18.5A 3-Pin(3+Tab) TO-3P(N) Rail
Avnet
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:74A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Images

Augswan
RS
iiiC
Farnell
Rochester Electronics
UTSource
Future Electronics

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  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

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