onsemi FDS6900AS
$ 0.618
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDS6900AS | 496 | 454 | |||||||||
| Rochester Electronics | FDS6900AS | 496 | 22h | |||||||||
| Farnell | FDS6900AS. | 0 | 1 | Cut Tape | 9h | |||||||
| element14 APAC | FDS6900AS. | 0 | 1 | Cut Tape | 16h | |||||||
| Microchip USA | FDS6900AS | 364 | 600 | Bulk | 4d |
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Modèles CAO
Téléchargez les symboles onsemi FDS6900AS, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
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Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-29
Lifecycle StatusObsolete (Last Updated: 6 hours ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 hours ago)
Descriptions
Descriptions de onsemi FDS6900AS fournies par ses distributeurs.
Transistor MOSFET Array Dual N-CH 30V 8.2A/6.9A 8-Pin SOIC T/R
Dual N-Channel 30 V 27/22 mOhm PowerTrench® SyncFET - SOIC-8
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE <AZ
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Dual N-Channel PowerTrench® SyncFET™ 30V
Power Field-Effect Transistor, 8.2A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SO8, DUAL NCH, POWER TRENCH SYNCFET
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET, DUAL, N, SMD, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.9A; Resistance, Rds On:27mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:6.9A; Current, Id Cont N Channel 3:8.2A; Current, Idm Pulse N Channel 2:20A; Current, Idm Pulse N Channel 3:30A; No. of Pins:8; Power Dissipation:2W; Resistance, Rds on N Channel 1:0.027ohm; Resistance, Rds on N Channel 2:0.022ohm; Transistors, No. of:1; Voltage, Vds Max:30V
The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)8.2 A
Current Rating8.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance600 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements2
Power Dissipation2 W
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time4 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time23 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width3.99 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Déclarations de conformité