onsemi FDP20N50F
$ 1.639
Production
Prix et stock
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Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : -4.95%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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1 composant disponible
Modèles CAO
Téléchargez les symboles onsemi FDP20N50F, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | Empreinte | Télécharger |
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Ce composant
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Price @ 1000
$ 1.639
$ 1.734
Stock
719,187
366,090
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
500 V
500 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-
-
Rds On Max
260 mΩ
260 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
250 W
38.5 W
Input Capacitance
3.39 nF
3.39 nF
Chaîne d'approvisionnement
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
InfineonSPP21N50C3XKSA1
MOSFET N-CH 500V 21A TO220-3 N-Channel 500 V 21A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
STMicroelectronicsSTP20NK50Z
N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected in TO-220 package
onsemiFCP190N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220
Descriptions
Descriptions de onsemi FDP20N50F fournies par ses distributeurs.
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 20 A, 260 mΩ, TO-220
Single N-Channel 500 V 0.26 Ohm 65 nC 250 W DMOS Flange Mount Mosfet - TO-220-3
Power Field-Effect Transistor, 20A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
250W(Tc) 30V 5V@ 250µA 65nC@ 10 V 1individualNChannel 500V 260mΩ@ 10A,10V 20A 3.39nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
MOSFET, N CH, 500V, 20A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -4.95%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance260 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.39 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Rds On Max260 mΩ
Rise Time120 ns
Schedule B8541290080
Turn-Off Delay Time100 ns
Turn-On Delay Time45 ns
Conformité
Classification environnementale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Déclarations de conformité