onsemi FDMS8023S

Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R
$ 0.563
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Master Electronics

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IHS

element14 APAC

onsemi

Fairchild Semiconductor

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Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-27
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)

Pièces détachées

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MOSFET N-Channel 30V 24A/49A 2.8mΩ@24A,10V 47nC@10V 3nF@15V 2.5W(Ta) 50W(Tc) QFN SMD 6mm×5mm×1.1mm H
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N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
InfineonIRLR8259PBF
25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Descriptions

Descriptions de onsemi FDMS8023S fournies par ses distributeurs.

Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

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