onsemi FDMS3572

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ
$ 1.63
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDMS3572.

Historique des stocks

Tendance sur 3 mois:
-1.81%

Chaîne d'approvisionnement

Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Pièces détachées

onsemiFDS3572
N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8
InfineonIRF7493PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
onsemiFDS5670
N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ
onsemiFDMS5672
N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ
InfineonIRF7488PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
MOSFET, N-channel, 20V, 3.6A, SOT-23 package, Vishay

Descriptions

Descriptions de onsemi FDMS3572 fournies par ses distributeurs.

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ
Trans MOSFET N-CH Si 80V 8.8A 8-Pin WDFN EP T/R / MOSFET N-CH 80V 8.8A POWER56
Power MOSFET, N Channel, 80 V, 8.8 A, 0.0165 ohm, Power 56, Surface Mount
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:8.8A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDMS3572; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Alias du fabricant

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