onsemi FDH50N50_F133

Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3
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NewarkFDH50N50_F1330450
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AztechFDH50N50_F133791
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Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FDH50N50_F133.

IHS

Datasheet10 pagesIl y a 12 ans

onsemi

Fairchild Semiconductor

Future Electronics

Chaîne d'approvisionnement

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-12-14

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N-Channel Power MOSFET, UniFETTM, 500 V, 44 A, 120 mΩ, TO-247
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STMicroelectronicsSTW45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A, MDmesh M5 Power MOSFET in TO-247 package
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N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
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InfineonIPW60R099P6XKSA1
MOSFET N-CH 600V 37.9A TO247-3 / N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3
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InfineonIPW60R099C6FKSA1
Trans MOSFET N-CH 600V 37.9A Automotive 3-Pin(3+Tab) TO-247 Tube
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Descriptions

Descriptions de onsemi FDH50N50_F133 fournies par ses distributeurs.

Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3
Future Electronics
N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ
onsemi
Power Field-Effect Transistor, 48A I(D), 500V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
Semicontronic
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Fairchild Semiconductor

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