onsemi FDD4141
$ 0.509
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Tendance sur 3 mois : +46.12%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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1 composant disponible
Modèles CAO
Téléchargez les symboles onsemi FDD4141, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
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|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | 3D | Télécharger |
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Price @ 1000
$ 0.509
$ 0.498
Stock
929,428
1,238,634
Authorized Distributors
6
5
Mount
Surface Mount
Surface Mount
Case/Package
TO-252
DPAK
Drain to Source Voltage (Vdss)
-40 V
-40 V
Continuous Drain Current (ID)
50 A
10.8 A
Threshold Voltage
-1.8 V
-
Rds On Max
12.3 mΩ
12.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.4 W
69 W
Input Capacitance
2.775 nF
2.775 nF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-07-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
onsemiFDD4141-F085
FDD4141-F085 P-Channel MOSFET, 50 A, 40 V PowerTrench, 3-Pin DPAK ON Semiconductor
VishaySUD45P03-09-GE3
Single P-Channel 30 V 8.7 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
InfineonIPD036N04LGBTMA1
MOSFET N-CH 40V 90A TO252-3 / N-Channel 40 V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3
Descriptions
Descriptions de onsemi FDD4141 fournies par ses distributeurs.
PowerTrench® MOSFET, P-Channel, -40V, -50A, 12.3mΩ
P-Channel 40 V 12.3 mOhm 50 nC Surface Mount PowerTrench Mosfet - DPAK
Power Field-Effect Transistor, 50A I(D), 40V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
MOSFET, P CH, 40V, 10.8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):10.1mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -50 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 69
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +46.12%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance12.3 mΩ
Drain to Source Voltage (Vdss)-40 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.775 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.4 W
Rds On Max12.3 mΩ
Resistance12.3 MΩ
Rise Time7 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité