onsemi FDD2670
$ 1.051
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : -0.45%
Modèles CAO
0 models available
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-06-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions de onsemi FDD2670 fournies par ses distributeurs.
N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ
Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
3.2W(Ta)，70W(Tc) 20V 4.5V@ 250µA 43nC@ 10 V 1individualNChannel 200V 130mΩ@ 3.6A,10V 3.6A 1.228nF@100V TO-252AA SMD mount 6.73mm*6.22mm*2.39mm
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70mW; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.6A; Package / Case:DPAK; Power Dissipation Pd:70mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : -0.45%
Modèles CAO
0 models available
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)3.6 A
Current Rating3.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.228 nF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation70 W
Rds On Max130 mΩ
Rise Time8 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)200 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité