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onsemi FCU5N60TU

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
Obsolete
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Fiches techniques et documents

Téléchargez les fiches techniques et la documentation du fabricant pour onsemi FCU5N60TU.

IHS

Datasheet6 pagesIl y a 12 ans
Datasheet0 pageIl y a 0 an

onsemi

Fairchild Semiconductor

Farnell

Newark

Chaîne d'approvisionnement

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-07-11
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)

Pièces détachées

STMicroelectronicsSTU9N60M2
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
STMicroelectronicsSTU7N60M2
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
STMicroelectronicsSTD4NK60Z-1
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in IPAK
MOSFET N-CH 650V 4.5A TO251-3 N-Channel 650 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO251-3-11
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK

Descriptions

Descriptions de onsemi FCU5N60TU fournies par ses distributeurs.

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
MOSFET, N, 600V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipa
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Alias du fabricant

onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON Semiconductor / Fairchild
  • ON SEMICOND
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • onsemi / Fairchild
  • ON SEMICONDUCTOR CORP
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

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  • FCU5N60TU.