onsemi FCPF190N60
$ 1.754
Production
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : +113%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Pièces détachées
VishaySIHF22N60E-GE3
35W(Tc) 30V 4V@ 250¦ÌA 86nC@ 10 V 1N 600V 180m¦¸@ 11A,10V 21A 1.92nF@100V TO-220 16.12mm
onsemiFCPF260N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F
STMicroelectronicsSTF24NM60N
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
VishaySIHF15N60E-GE3
34W(Tc) 30V 4V@ 250¦ÌA 78nC@ 10 V 1N 600V 280m¦¸@ 8A,10V 15A 1.35nF@100V TO-220 16.12mm
Descriptions
Descriptions de onsemi FCPF190N60 fournies par ses distributeurs.
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Rail
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.
Alias du fabricant
onsemi possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. onsemi peut également être connu sous les noms suivants :
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historique des stocks
Tendance sur 3 mois : +113%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)20.2 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance199 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.95 nF
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation39 W
Rds On Max199 mΩ
Rise Time10 ns
Threshold Voltage2.5 V
Turn-Off Delay Time64 ns
Turn-On Delay Time20 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité