Nexperia PBSS8110T,215
$ 0.229
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | PBSS8110T.215 | 0 | 1 | 17h | ||||||||
| Newark | PBSS8110T,215 | 0 | 5 | Cut Tape | ||||||||
| Avnet | PBSS8110T,215 | 0 | 3K | 3d | ||||||||
| Future Electronics | PBSS8110T,215 | 0 | 3K | Tape & Reel | ||||||||
| element14 APAC | PBSS8110T,215 | 0 | 5 | Cut Tape | 16h |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Modèles CAO
Téléchargez les symboles Nexperia PBSS8110T,215, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
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Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-12-23
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Pièces détachées
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Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Descriptions
Descriptions de Nexperia PBSS8110T,215 fournies par ses distributeurs.
Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-23, PBSS8110T,215
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
100 V, 1 A NPN low VCEsat transistor
Trans GP BJT NPN 100V 1A 480mW Automotive 3-Pin SOT-23 T/R
NPN low VCEsat transistor VCEO=100V VEBO=5V IC=1A SOT23
1000 mA 100 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 120V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 120V
Alias du fabricant
Nexperia possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Nexperia peut également être connu sous les noms suivants :
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)100 V
Current1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min150
Max Breakdown Voltage100 V
Max Collector Current1 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation480 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation480 mW
Schedule B8541210080
TerminationSMD/SMT
Test Current5 mA
Transition Frequency100 MHz
Voltage100 V
Zener Voltage12 V
Dimensions
Height1 mm
Length3 mm
Width1.4 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité