Infineon SPW47N60CFDFKSA1

Power MOSFET, N Channel, 600 V, 46 A, 0.083 ohm, TO-247, Through Hole

Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.

Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:417W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon SPW47N60CFDFKSA1.

MOSFET, N, COOLMOS, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:46A; Resistance, Rds on:0.083R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:TO-247 (SOT-249); Temperature, operating range:-55°C to +150°C; Current, Id cont @ 25 degree C:46A; Current, Idm pulse:115A; Pins, No. of:3; Power dissipation:417W; Power, Pd:417W; Power, Ptot:417W; Temperature, Tj max:150°C; Temperature, Tj min:-55°C; Temperature, current:25°C; Temperature, full power rating:25°C; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds max:600V; Voltage, Vgs th max:5V