Infineon SPP20N60CFDXKSA1

Transistor MOSFET N-Channel 650V 20.7A 3-Pin TO-220

Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB Tube

650V 20.7A 208W 220m´Î@10V13.1A 5V@1mA N Channel TO-220(TO-220-3) MOSFETs ROHS

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):220mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:20.7A; Package / Case:TO-220; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.