Infineon IRLR2703PBF
$ 0.337
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRLR2703PBF | 315 | 11h | |||||||||
| RS (Formerly Allied Electronics) | IRLR2703PBF | 0 | 1200 | Bulk | 4h | |||||||
| Farnell | IRLR2703PBF | 0 | 1 | 10h | ||||||||
| Win Source | WS-IRLR2703PBF | 20 | 75 | 12h | ||||||||
| Worldway Electronics | IRLR2703PBF | 10 864 | 7 | Tube | 11h |
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Pièces de rechange
Ce composant
Pièces de rechange
Price @ 1000
$ 0.337
$ 0.433
$ 0.433
Stock
136,874
459,693
459,693
Authorized Distributors
3
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
1 V
-
-
Rds On Max
45 mΩ
45 mΩ
45 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
38 W
38 W
38 W
Input Capacitance
450 pF
450 pF
450 pF
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Pièces détachées
InfineonIRLR2703TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;D-Pak (TO-252AA);PD 45W
STMicroelectronicsSTD27N3LH5
N-channel 30 V, 0.014 Ohm, 27 A, DPAK, STripFET (TM) V Power MOSFET
onsemiNTD23N03RG
Tube Surface Mount N-Channel Single Mosfet Transistor 3.8A Ta 17.1A Tc 17.1A 1.64W 2ns
Diodes Inc.DMP3028LK3-13
MOSFET P-CH 30V 27A TO252 / Trans MOSFET P-CH 30V 27A 3-Pin(2+Tab) DPAK T/R
Diodes Inc.DMP3010LK3-13
Single P-Channel 30 V 10.2 mOhm 59.2 nC 3.4 W Silicon SMT Mosfet - TO-252-3
Descriptions
Descriptions de Infineon IRLR2703PBF fournies par ses distributeurs.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;D-Pak (TO-252AA);PD 45W
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 30V, 22A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:38W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:23A; Junction to Case Thermal Resistance A:3.3°C/W; On State resistance @ Vgs = 10V:45mohm; Package / Case:DPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:96A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating23 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance450 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3000
Power Dissipation38 W
Rds On Max45 mΩ
Recovery Time97 ns
Resistance45 mΩ
Rise Time140 ns
Threshold Voltage1 V
Turn-Off Delay Time12 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)30 V
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité