Infineon IRFU120NPBF
$ 0.459
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : +8.62%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Modèles CAO
Téléchargez les symboles Infineon IRFU120NPBF, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 Component Search Engine | SymboleEmpreinte | 3D | Télécharger |
 EE Concierge | SymboleEmpreinte |
Le site partenaire s’ouvrira dans un nouvel onglet lorsque vous téléchargez ses modèles de CAO.
En téléchargeant des modèles de CAO depuis Octopart, vous acceptez nos conditions générales d’utilisation et notre politique de confidentialité.
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2012-08-25
LTD Date2013-02-25
Pièces détachées
InfineonIRLU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
InfineonIRFU5410PBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W
Descriptions
Descriptions de Infineon IRFU120NPBF fournies par ses distributeurs.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : +8.62%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9.1 A
Current Rating9.4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance210 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance330 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance210 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation39 W
Rds On Max210 mΩ
Recovery Time150 ns
Resistance210 mΩ
Rise Time23 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time4.5 ns
Voltage Rating (DC)100 V
Dimensions
Height9.75 mm
Length6.6 mm
Width2.3 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
REACH SVHCNo
RoHSCompliant
Déclarations de conformité