Infineon IRFP150NPBF
$ 1.14
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Tendance sur 3 mois : -6.97%
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Price @ 1000
$ 1.14
$ 1.328
Stock
2,996,823
89,870
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
42 A
40 A
Threshold Voltage
4 V
-
Rds On Max
36 mΩ
40 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
160 W
Input Capacitance
1.9 nF
-
Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-08-13
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Pièces détachées
InfineonIRFP150MPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
InfineonIRFP140NPBF
MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC
InfineonIRFP044NPBF
MOSFET, Power; N-Channel; 0.020 Ohms (Max.) @ 10 V, 29 A; 55 V (Min.); 40 degC/
VishayIRFP9140PBF
Power MOSFET, General Purpose, P Channel, 100 V, 21 A, 0.2 ohm, TO-247AC, Through Hole
Descriptions
Descriptions de Infineon IRFP150NPBF fournies par ses distributeurs.
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V
Power MOSFET, General Purpose, N Channel, 100 V, 42 A, 0.036 ohm, TO-247AC, Through Hole
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 42 A, TO-247, IRFP150NPBF
Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : -6.97%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance36 mΩ
Package Quantity400
PackagingBulk
Power Dissipation140 W
Rds On Max36 mΩ
Recovery Time270 ns
Resistance36 mΩ
Rise Time56 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height24.99 mm
Lead Pitch5.45 mm
Length15.875 mm
Width5.3 mm
Conformité
Classification environnementale
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité