Infineon IRFI1310NPBF
$ 0.777
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Tendance sur 3 mois : -28.23%
Modèles CAO
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Modèles CAO
Téléchargez les symboles Infineon IRFI1310NPBF, les empreintes et les modèles STEP 3D de nos partenaires de confiance.
| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
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Chaîne d'approvisionnement
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2011-04-25
LTD Date2011-10-25
Pièces détachées
InfineonIRFI540NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W
STMicroelectronicsSTP25N10F7
N-channel 100 V, 0.027 Ohm typ., 25 A STripFET F7 Power MOSFET in TO-220 package
InfineonIRLI540NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 23A;TO-220 Full-Pak;PD 54W
Descriptions
Descriptions de Infineon IRFI1310NPBF fournies par ses distributeurs.
Single N-Channel 100 V 0.036 Ohm 120 nC HEXFET® Power Mosfet - TO-220-3FP
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, TO-220-3 FP, RoHS
Infineon SCT
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=24A) | MOSFET N-CH 100V 24A TO220FP
Trans MOSFET N-CH 100V 24A 3-Pin(3+Tab) TO-220 Full-Pack
MOSFET, 100V, 22A, 36 MOHM, 80 NC QG, TO-220 FULLPACK
Power Field-Effect Transistor, 24A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:45W; No. Of Pins:3Pins; Msl:-Rohs Compliant: Yes |Infineon Technologies IRFI1310NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 100V, 22A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:22A; Resistance, Rds On:0.036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:140A; No. of Pins:3; Power Dissipation:45W; Power, Pd:45W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.7°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 24 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 56 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 56
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : -28.23%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)24 A
Current Rating22 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Isolation Voltage2500 Vrms
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance36 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation45 W
Rds On Max36 mΩ
Rise Time56 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height19.8 mm
Length10.6172 mm
Width4.826 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité