Infineon IRF9530NPBF

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V

Infineon Technologies P-channel HEXFET power MOSFET, -100 V, -14 A, TO-220, IRF9530NPBF

Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3

In a Tube of 50, P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF

-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Transistor MOSFET P-Ch. -14A/-100V TO220 IRF 9530N PBF

Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 79 W

HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, P, -100V, -14A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:75W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-14A; Current Temperature:25°C; Device Marking:IRF9530N; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V