Infineon IRF8308MTRPBF
$ 1.11
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Pièces détachées
InfineonIRF8302MTRPBF
Mosfet, N-Ch, 30V, 190A, 150Deg C, 104W Rohs Compliant: Yes |Infineon IRF8302MTRPBF
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VishaySIRA06DP-T1-GE3
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
VishaySIRA04DP-T1-GE3
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InfineonIRF9383MTRPBF
T&R / MOSFET, P-CHANNEL, -30V, -160A, 2.9 mOhm, -4.5V capable, DirectFET M-Can
Descriptions
Descriptions de Infineon IRF8308MTRPBF fournies par ses distributeurs.
Single N-Channel 30 V 1.9 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N-CH, 30V, 27A, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8W; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-40°C to +150°C
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : +0.00%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.404 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation89 W
Rds On Max2.5 mΩ
Rise Time19 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time11 ns
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité