Infineon IRF6641TRPBF
Obsolete
Prix et stock
Distributeurs agréés
Distributeurs de solutions de stockage non agréés
Revendeurs non agréés
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6641TRPBF | 0 | 4800 | Bulk | 7h | |||||||
| Microchip USA | IRF6641TRPBF | 104 | 150 | 3d | ||||||||
| Win Source | WS-IRF6641TRPBF | 120 | 60 | 19h | ||||||||
| Worldway Electronics | IRF6641TRPBF | 19 550 | 7 | Tape & Reel | 23h | |||||||
| ICPartonline | IRF6641TRPBF | 15 602 | >1wk |
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Chaîne d'approvisionnement
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-02
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
Pièces détachées
InfineonIRFR4615PBF
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
Descriptions
Descriptions de Infineon IRF6641TRPBF fournies par ses distributeurs.
Single N-Channel 200 V 0.051 Ohm 48 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET N-CH Si 200V 4.6A 7-Pin Direct-FET MZ T/R
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes., MG-WDSON-5, RoHS
Infineon SCT
MOSFET, 200V, 26A, 60 MOHM, 34 NC QG, MED CAN
MOSFET N-CH 200V 4.6A DIRECTFET
MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRF6641 12V-300V N-CHANNEL POWER MOSFET;
MOSFET N-CH 200V 4.6A/26A DIRECT
IC COUNTER 4-BIT BIN RIP 14-SOIC
Trench_Mosfets Rohs Compliant: Yes
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)4.6 A
Current Rating4.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance59.9 mΩ
Drain to Source Voltage (Vdss)200 V
Fall Time6.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.29 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage200 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance59.9 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max59.9 mΩ
Resistance51 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)200 V
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm
Conformité
Classification environnementale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Déclarations de conformité