Infineon IRF3205ZPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de

Single N-Channel 55 V 6.5 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

MOSFET N-CH 55V 75A TO220AB N-Channel 55 V 75A (Tc) 170W (Tc) Through Hole TO-220AB

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 170 W

Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 55V, 110A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:6.5mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:440A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.