Infineon IR21365SPBF

IR2136 Series 600 V 200 mA 20 V Supply Six 3 Phase Bridge Driver - SOIC-28

Driver 600V 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin SOIC W Tube

600 V three-phase gate driver IC with over current protection, enable and fault reporting, SOIC 28W, RoHS

3-PHASE BRIDGE DRIVER Half Bridge Based MOSFET Driver, 0.35A, CMOS, PDSO28

600 V Three Phase Driver IC with typical 0.2 A source and 0.35 A sink currents in 28 Lead SOICWB package for IGBTs and MOSFETs. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 12 V to 20 V; Undervoltage lockout for all channels; Over-current shutdown turns off all six drivers; Independent 3 half-bridge drivers; Matched propagation delay for all channels; Cross-conduction prevention logic; Low side output out of phase with inputs. High side outputs out of phase; 3.3 V logic compatible; Lower di/dt gate drive for better noise immunity; Externally programmable delay for automatic fault clear; Variations include IR21363

The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.