Infineon IPD80R1K4P7ATMA1

Power MOSFET, N Channel, 800 V, 4 A, 1.4 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount

A new benchmark in efficiency and thermal performance, PG-TO252-3, RoHS

800V 4A 1.4惟@10V,1.4A 32W 3.5V@700uA 1 N-Channel TO-252-3 MOSFETs ROHS

Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R

Power Field-Effect Transistor, 4A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252

Infineon NMOS CoolMOS P7, Vds=800 V, 4 A, DPAK (TO-252), , 3

MOSFET N-Ch 800V 4A CoolMOS P7 TO-252

800V, 1.4OHM, N-CHANNEL MOSFET,

IPD80R1K4 - 800V COOLMOS N-CHANN

MOSFET, N-CH, 800V, 4A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.