Infineon BFP620H7764XTSA1
$ 0.271
NRND
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BFP620H7764XTSA1 | 4 293 | 1 | Cut Tape | ||||||||
| DigiKey | BFP620H7764XTSA1CT-ND | 6 287 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BFP620H7764XTSA1 | 776 | 1 | |||||||||
| Avnet | BFP620H7764XTSA1 | 0 | 3K | 20h | ||||||||
| Future Electronics | BFP620H7764XTSA1 | 0 | 3K | Tape & Reel |
Historique des stocks
Tendance sur 3 mois : -8.87%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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0 composant disponible
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour Infineon BFP620H7764XTSA1.
Modèles CAO
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| SOURCE | ECAD | MCAD | FICHIERS |
|---|---|---|---|
 EE Concierge | SymboleEmpreinte | ||
 SnapEDA | Empreinte | Télécharger |
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Chaîne d'approvisionnement
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-05-01
Lifecycle StatusNRND (Last Updated: 3 weeks ago)
LTB Date2003-03-31
LTD Date2004-09-30
Pièces détachées
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHM2SCR502EBTL
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
ROHM2SCR522EBTL
Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Descriptions
Descriptions de Infineon BFP620H7764XTSA1 fournies par ses distributeurs.
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon Germanium, NPN
RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.3V; Transition Frequency ft: 65GHz; Power Dissipation Pd: 185mW; DC Collector Current: 80mA; DC Current Gain hFE: 180hFE; RF Transistor Ca
Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 2.3 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 7.5 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 65 / Power Dissipation (Pd) mW = 185 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
Summary of Features: Highly linear low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Based on Infineon's reliable high volume SiGe:C technology; Ideal for CDMA and WLAN applications; Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application; Maximum stable gain :Gms = 21.5 dB at 1.8 GHz ,Gma = 11 dB at 6 GHz; Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz; Outstanding noise figure NFmin = 1.3 dB at 6 GHz; Accurate SPICE GP model enables effective design in process; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Transistor, RF SOT-343; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:2.3V; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; No. of Pins:3; Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Typ:65GHz; Hfe Min:110; No. of Transistors:1; Noise Figure Typ:0.7dB; Output @ Third Order Intercept Point IP3:25dB; Package / Case:TSFP4; Power @ 1dB Gain Compression, P1dB:15dBm; Power Dissipation Ptot Max:185mW; SMD Marking:R2s; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:7.5V
Alias du fabricant
Infineon possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Infineon peut également être connu sous les noms suivants :
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historique des stocks
Tendance sur 3 mois : -8.87%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
0 composant disponible
Spécifications techniques
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Collector Base Voltage (VCBO)7.5 V
Collector Emitter Breakdown Voltage2.8 V
Collector Emitter Voltage (VCEO)2.3 V
Emitter Base Voltage (VEBO)1.2 V
Frequency65 GHz
Gain21.5 dB
hFE Min110
Hold Current100 mA
Max Breakdown Voltage2.8 V
Max Collector Current80 mA
Max Operating Temperature150 °C
Max Power Dissipation185 mW
Max Repetitive Reverse Voltage (Vrrm)15 V
Min Operating Temperature-65 °C
Noise Figure0.7 dB
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation185 mW
Power Gain21.5 dB
Power Rating1 W
Transition Frequency65 GHz
Fiches techniques et documents
Téléchargez les fiches techniques et la documentation du fabricant pour Infineon BFP620H7764XTSA1.
Conformité
Classification environnementale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Déclarations de conformité