Diodes Inc. ZVN3310A
$ 0.407
Production
Historique des stocks
Tendance sur 3 mois : -5.40%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
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1 composant disponible
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Ce composant
Pièces de rechange
Price @ 1000
$ 0.407
$ 0.415
Stock
226,153
248,785
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
200 mA
200 mA
Threshold Voltage
2.4 V
-
Rds On Max
10 Ω
10 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
625 mW
625 mW
Input Capacitance
40 pF
40 pF
Chaîne d'approvisionnement
Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Pièces détachées
Diodes Inc.ZVN3310ASTZ
625mW(Ta) 20V 2.4V@1mA 1N 100V 10¦¸@ 500mA,10V 200mA 40pF@25V TO-92 , 4.77mm*2.41mm*4.01mm
Descriptions
Descriptions de Diodes Inc. ZVN3310A fournies par ses distributeurs.
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | MOSFET N-CH 100V 200MA TO92-3
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):10ohm; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:2A
Alias du fabricant
Diodes Inc. possède plusieurs marques à travers le monde que les distributeurs peuvent utiliser comme noms alternatifs. Diodes Inc. peut également être connu sous les noms suivants :
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Historique des stocks
Tendance sur 3 mois : -5.40%
Modèles CAO
Télécharger le symbole, l’empreinte et le 3D STEP
Pièces de rechange
1 composant disponible
Spécifications techniques
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation625 mW
Rds On Max10 Ω
Resistance10 Ω
Rise Time7 ns
Threshold Voltage2.4 V
Turn-Off Delay Time6 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)100 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Conformité
Classification environnementale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Déclarations de conformité