Vishay SI7450DP-T1-GE3
$ 1.484
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI7450DP-T1-GE3 | 2770 | 5 | Cut Tape | ||||||||
| Verical | SI7450DP-T1-GE3 | 990 | 9 | |||||||||
| Arrow Electronics | SI7450DP-T1-GE3 | 990 | 1 | |||||||||
| DigiKey | SI7450DP-T1-GE3CT-ND | 1220 | 1 | Cut Tape | ||||||||
| TTI | SI7450DP-T1-GE3 | 3000 | 3K | Tape & Reel | 1d |
Historial de existencias
Tendencia de 3 meses: -26.95%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Vishay SI7450DP-T1-GE3 desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint |
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Este componente
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Price @ 1000
$ 1.484
$ 1.54
Stock
204,353
345,980
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
-
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
3.2 A
3.2 A
Threshold Voltage
4.5 V
2 V
Rds On Max
80 mΩ
80 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.9 W
1.9 W
Input Capacitance
-
-
Cadena de suministros
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-09-11
Lifecycle StatusProduction (Last Updated: 4 months ago)
Componentes relacionados
Descripciones
Descripciones de Vishay SI7450DP-T1-GE3 suministradas por sus distribuidores.
Trans MOSFET N-CH 200V 5.3A 8-Pin PowerPAK SOIC
1.9W(Ta) 20V 4.5V@ 250¦ÌA 42nC@ 10 V 1N 200V 80m¦¸@ 4A,10V 3.2A 2.38nF 4.9mm*5.89mm*1.07mm
Single N-Channel 200 V 0.08 O 42 nC Surface Mount Power Mosfet - PowerPAK SO-8
N-CHANNEL 200-V (D-S) MOSFET Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N Ch Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.9W Rohs Compliant: No |Vishay SI7450DP-T1-GE3.
MOSFET,N CH,200V.3.2A,PPSO8; Transistor Polarity:N; Max Current Id:3.2A; Max Voltage Vds:200V; On State Resistance:5ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Case Style:SOIC PowerPAK; Cont Current Id:3.2A; Current Temperature:25°C; External Depth:5.26mm; External Length / Height:1.2mm; External Width:6.2mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Max Junction Temperature Tj:150°C; Max On State Resistance:0.080ohm; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:2V; N-channel Gate Charge:42nC; Power Dissipation Pd:1.9W; Pulse Current Idm:40A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:200V; Typ Voltage Vgs th:4.5V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Vishay tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Vishay también podría ser conocido por los siguientes nombres:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Historial de existencias
Tendencia de 3 meses: -26.95%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Manufacturer Package IdentifierS17-0173-Single
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.9 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Dimensions
Height1.17 mm
Length4.9 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento