onsemi NDS331N
$ 0.195
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +13.95%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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1 piezas disponibles
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Stock
12,636,253
3,721,792
3,721,792
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
DFN
DFN
Drain to Source Voltage (Vdss)
20 V
20 V
20 V
Continuous Drain Current (ID)
1.3 A
1.3 A
1.3 A
Threshold Voltage
700 mV
950 mV
950 mV
Rds On Max
160 mΩ
175 mΩ
175 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
8 V
Power Dissipation
500 mW
500 mW
500 mW
Input Capacitance
162 pF
64.3 pF
64.3 pF
Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Single P-Channel 20 V 1.5 W 5.5 nC Silicon Surface Mount Mosfet - SOT-23
Descripciones
Descripciones de onsemi NDS331N suministradas por sus distribuidores.
Transistor MOSFET N Channel 20 Volt 1.3 Amp 3-Pin Supersot Tape And Reel
N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω
MOSFET N-CH 20V 1.3A SSOT3 / Trans MOSFET N-CH 20V 1.3A 3-Pin SOT-23 T/R
Power MOSFET, N Channel, 20 V, 1.3 A, 0.16 ohm, SuperSOT, Surface Mount
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,N CH,20V,1.3A,SSOT3; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:2.7V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.3A; Power Dissipation Pd:500mW; Voltage Vgs Max:8V
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +13.95%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.3 A
Current Rating1.3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance162 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max160 mΩ
Resistance160 mΩ
Rise Time25 ns
Schedule B8541210080
Threshold Voltage700 mV
Turn-Off Delay Time10 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.22 mm
Length2.92 mm
Width1.4 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento