onsemi MUN2213T1G
$ 0.034
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | MUN2213T1GOSCT-ND | 2844 | 1 | Cut Tape | ||||||||
| Avnet | MUN2213T1G | 183.000 | 3K | 9h | ||||||||
| Future Electronics | MUN2213T1G | 27.000 | 3K | Tape & Reel | ||||||||
| Newark | MUN2213T1G. | 183.000 | 3K | Tape & Reel | ||||||||
| Verical | MUN2213T1G | 1771 | 556 |
Historial de existencias
Tendencia de 3 meses: -12.44%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 Ultra Librarian | SímboloFootprint | Descargar |
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.034
$ 0.018
$ 0.018
Stock
7,984,664
2,406,812
2,406,812
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SC
SC
SC
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
250 mV
hFE Min
80
80
80
Power Dissipation
230 mW
338 mW
338 mW
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi MUN2213T1G suministradas por sus distribuidores.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO
NPN Bipolar Digital Transistor (BRT)
MUN Series 50 V 100 mA 47 kOhm NPN Silicon Bias Resistor Transistor - SC-59
MUN2213T1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 47 KOHMS, RATIO OF 1, 3-PIN SC-59
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
TRANS, 50V, 47/47KOHM, SC-59-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -12.44%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation230 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1.09 mm
Length2.9 mm
Width1.5 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi MUN2213T1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento