onsemi DTC123JET1G
$ 0.042
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | DTC123JET1G | 53 | 1 | |||||||||
| DigiKey | DTC123JET1GOSCT-ND | 548 | 1 | Cut Tape | ||||||||
| Newark | DTC123JET1G | 0 | 5 | Cut Tape | ||||||||
| Onlinecomponents.com | DTC123JET1G | 0 | 3K | Bulk | ||||||||
| RS (Formerly Allied Electronics) | DTC123JET1G | 0 | 250 | Bulk | 15h |
Historial de existencias
Tendencia de 3 meses: -14.23%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi DTC123JET1G.
Modelos CAD
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.042
$ 0.044
Stock
1,126,669
569,691
Authorized Distributors
6
2
Mount
-
Surface Mount
Case/Package
SC
-
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
80
80
Power Dissipation
200 mW
200 mW
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi DTC123JET1G suministradas por sus distribuidores.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
NPN Bipolar Digital Transistor (BRT)
DTC123JET1G NPN DIGITAL TRANSISTOR,100MA 50V 2.2 KOHM, RATIO OF 0.047,3-PIN SC-75
DTC Series 50 V 100 mA 47 kOhm NPN Silicon Bias Resistor Transistor - SC-75
80@5mA,10V 1 NPN - Pre Biased 200mW 100mA 50V 500nA SOT-523(SC-75) Digital Transistors ROHS
ON SEMICONDUCTOR - DTC123JET1G - BRT TRANSISTOR, 50V, 47K/2.2KOHM, SC75, FULL REEL
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
TRANS, NPN, 2.2K/47K, SC-75-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resis
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -14.23%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height800 µm
Length1.65 mm
Width900 µm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi DTC123JET1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento