onsemi HGTG11N120CN

Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
$ 1.924
Obsolete
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
Verical
3
HGTG11N120CN243158
Rochester ElectronicsHGTG11N120CN971
21h
Component Stockers USAHGTG11N120CN1040
>1wk
Win SourceWS-HGTG11N120CN65.00020
22h
Worldway ElectronicsHGTG11N120CN22.3417Tube
21h

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para onsemi HGTG11N120CN.

IHS

Datasheet0 páginasHace 0 años
Datasheet0 páginasHace 0 años

Fairchild Semiconductor

Historial de existencias

Tendencia de 3 meses:
Restocked
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Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23

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Descripciones

Descripciones de onsemi HGTG11N120CN suministradas por sus distribuidores.

Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
Verical
43A, 1200V, NPT Series N-Channel IGBT | IGBT 1200V 43A 298W TO247
Win Source
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
IHS
PWR IGBT 35A 1200V NPT N-CHANNEL TO-247
Avnet
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Farnell
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Fairchild Semiconductor

Imágenes

Augswan
Rochester Electronics

Alias de fabricantes

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  • ON Semiconductor Inc.
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