onsemi FQP12P20
EOL
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-07-21
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descripciones
Descripciones de onsemi FQP12P20 suministradas por sus distribuidores.
P-Channel Power MOSFET, QFET®, -200 V, -11.5 A, 470 mΩ, TO-220
Trans MOSFET P-CH 200V 11.5A 3-Pin(3+Tab) TO-220AB Rail
200 V P-CHANNEL MOSFET Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 11.5A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Current Id Max: -11.5A; Device Marking: FQP12P20; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 46A; Termination Type: Through Hole; Voltage Vds Typ: -200V; Voltage Vgs Max: -30V; Voltage Vgs Rds on Measurement: -10V
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)11.5 A
Current Rating-11.5 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance470 mΩ
Drain to Source Voltage (Vdss)-200 V
Dual Supply Voltage-200 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-5 V
Number of Channels1
Number of Elements1
Power Dissipation120 W
Rds On Max470 mΩ
Resistance470 MΩ
Rise Time195 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-200 V
Dimensions
Height20.4 mm
Lead Pitch2.54 mm
Length10.1 mm
Width4.7 mm
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento