onsemi FQD17P06TM
$ 0.472
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FQD17P06TM | 45.000 | 2500 | Tape & Reel | ||||||||
| Avnet | FQD17P06TM | 5000 | 2500 | 12h | ||||||||
| Newark | FQD17P06TM | 5935 | 1 | Cut Tape | ||||||||
| Verical | FQD17P06TM | 596 | 15 | |||||||||
| Arrow Electronics | FQD17P06TM | 596 | 1 |
Historial de existencias
Tendencia de 3 meses: +289%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FQD17P06TM desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | SímboloFootprint | 3D | Descargar |
 Ultra Librarian | SímboloFootprint | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Componentes relacionados
Descripciones
Descripciones de onsemi FQD17P06TM suministradas por sus distribuidores.
P-Channel Power MOSFET, QFET®, -60 V, -12 A, 135 mΩ, DPAK
FQD17P06 Series -60 V -12 A 135 mOhm SMT P-Channel QFET Mosfet - DPAK-3
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CHANNEL, -60V, -12A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -12A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: QFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -12 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 135 / Gate-Source Voltage V = 25 / Fall Time ns = 130 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 35 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +289%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)12 A
Current Rating-12 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance135 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance900 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation44 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max135 mΩ
Resistance135 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-60 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento