onsemi FQD13N06LTM
$ 0.257
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FQD13N06LTM | 172.500 | 2500 | Tape & Reel | ||||||||
| Newark | FQD13N06LTM | 3326 | 1 | Cut Tape | ||||||||
| Master Electronics | FQD13N06LTM | 4700 | 100 | |||||||||
| Onlinecomponents.com | FQD13N06LTM | 4700 | 100 | Bulk | ||||||||
| DigiKey | FQD13N06LTMCT-ND | 21.304 | 1 | Cut Tape |
Historial de existencias
Tendencia de 3 meses: +34.23%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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Price @ 1000
$ 0.257
$ 1.153
Stock
1,038,239
1,701,683
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
DPAK
TO-252
Drain to Source Voltage (Vdss)
60 V
55 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
2.5 V
-
Rds On Max
115 mΩ
125 mΩ
Gate to Source Voltage (Vgs)
20 V
15 V
Power Dissipation
2.5 W
3.6 W
Input Capacitance
350 pF
338 pF
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-07-05
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descripciones
Descripciones de onsemi FQD13N06LTM suministradas por sus distribuidores.
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,11A I(D),TO-252AA
N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3
Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 28W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +34.23%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance145 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max115 mΩ
Resistance115 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento