onsemi FQD11P06TM
$ 0.467
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FQD11P06TM | 20.000 | 2500 | Tape & Reel | ||||||||
| Newark | FQD11P06TM | 5634 | 5 | Cut Tape | ||||||||
| Verical | FQD11P06TM | 672 | 4 | |||||||||
| Arrow Electronics | FQD11P06TM | 754 | 1 | |||||||||
| Master Electronics | FQD11P06TM | 4919 | 50 |
Historial de existencias
Tendencia de 3 meses: +150%
Modelos CAD
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Modelos CAD
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descripciones
Descripciones de onsemi FQD11P06TM suministradas por sus distribuidores.
TRANSISTOR, P-CHANNEL, QFET MOSFET, -60V, -9.4A, 185 MOHM, -55 TO 150C, D2PAK
Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, DPAK
In a Pack of 5, P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK ON Semiconductor FQD11P06TM
MOSFET P-CH 60V 9.4A DPAK / Trans MOSFET P-CH 60V 9.4A 3-Pin(2+Tab) DPAK T/R
P-Channel 60 V 0.185 Ohm Surface Mount Mosfet - TO-252-3
P-CHANNEL QFET MOSFET Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CHANNEL, -60V, -9.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: QFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -9.4 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 45 / Rise Time ns = 40 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 38
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: +150%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9.4 A
Current Rating-9.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance185 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance550 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max185 mΩ
Resistance185 mΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height2.517 mm
Length6.6 mm
Width6.1 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento