onsemi FDMS7678
$ 0.416
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -4.16%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de onsemi FDMS7678 desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Price @ 1000
$ 0.416
$ 0.503
$ 0.503
Stock
646,005
1,785,329
1,785,329
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
-
-
-
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
17.5 A
20 A
20 A
Threshold Voltage
1.5 V
-
-
Rds On Max
5.5 mΩ
3.9 mΩ
3.9 mΩ
Gate to Source Voltage (Vgs)
20 V
-
-
Power Dissipation
2.3 W
-
-
Input Capacitance
2.41 nF
3.1 nF
3.1 nF
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-04-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descripciones
Descripciones de onsemi FDMS7678 suministradas por sus distribuidores.
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren
N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -4.16%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight74 mg
Technical
Continuous Drain Current (ID)17.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.41 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.5 V
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max5.5 mΩ
Rise Time4 ns
Threshold Voltage1.5 V
Turn-Off Delay Time26 ns
Turn-On Delay Time10 ns
Dimensions
Height1.1 mm
Length5.1 mm
Width6.25 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento