onsemi FDME1023PZT
$ 0.433
EOL
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDME1023PZT | 923 | 769 | |||||||||
| Arrow Electronics | FDME1023PZT | 4328 | 1 | |||||||||
| Rochester Electronics | FDME1023PZT | 20.923 | 3h | |||||||||
| Flip Electronics | FDME1023PZT | 396.737 | 6d | |||||||||
| Newark | FDME1023PZT | 0 | 5K | Tape & Reel |
Historial de existencias
Tendencia de 3 meses: -0.03%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Cadena de suministros
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-10
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2025-01-05
LTD Date2025-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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Descripciones
Descripciones de onsemi FDME1023PZT suministradas por sus distribuidores.
Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ
Dual P-Channel 20 V 530 mOhm 7.7 nC 1.4 W PowerTrench SMT Mosfet - MICROFET-6
20V 2.6A 95m´Î@4.5V2.3A 1.4W 600mV@250uA 50pF@10V 2 P-Channel 305pF@10V 5.5nC@4.5V -55¡Í~+150¡Í@(Tj) MicroFET(1.6x1.6) MOSFETs ROHS
MOSFET, PP CH, 20V, 2.6A, MFET1.6X1.6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -0.03%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight25.2 mg
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance142 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time16 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance405 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation1.4 W
Rds On Max142 mΩ
Rise Time4.8 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time33 ns
Turn-On Delay Time4.7 ns
Dimensions
Height550 µm
Length1.6 mm
Width1.6 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento