onsemi FDG6322C
$ 0.141
EOL
Historial de existencias
Tendencia de 3 meses: -73.69%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-02-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Descripciones
Descripciones de onsemi FDG6322C suministradas por sus distribuidores.
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 2.6 ohm
Transistor: N+P-MOSFET; unipolar; 25V/-25V; 0.22A/-0.41A; 4/1.1ohm; 0.3W; -55+150 deg.C; SMD; SC70-6
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N & P CH, 25V, 220MA, SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:300mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -73.69%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs850 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max4 Ω
Resistance4 Ω
Rise Time8 ns
Schedule B8541210080
Threshold Voltage850 mV
Turn-Off Delay Time55 ns
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento