Descripciones de onsemi FDG6304P suministradas por sus distribuidores.
Transistor MOSFET Array Dual P-CH 25V 0.41A 6-Pin SC-70 T/R
Avnet Japan
Dual P-Channel Digital FET -25V, 0.41A, 1.1Ω
Dual MOSFET, P Channel, 25 V, 25 V, 410 mA, 410 mA, 0.85 ohm
Dual P-Channel 25 V 1.1 Ohm Surface Mount Digital FET - SC70-6
Trans MOSFET P-CH 25V 0.41A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 0.41A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDG6304P,006, PLASTIC MOLDED S C70-6 LEAD PACKAGE, SMD<AZ
25V DUAL P-CH. FET, 1.1 O, SC7
IC FET DGTL P-CHAN DUAL SC70-6
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-25V; Continuous Drain Current, Id:-0.41A; On Resistance, Rds(on):1.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-SC-70 ;RoHS Compliant: Yes
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.