onsemi FDG6321C
EOL
Precio y existencias
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Cadena de suministros
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-11-01
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2025-04-17
LTD Date2025-10-17
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
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Descripciones
Descripciones de onsemi FDG6321C suministradas por sus distribuidores.
Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
DUAL N/P CHANNEL MOSFET, 25V, SC-70; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 500mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 25V; Voltage Vgs Max: 800mV; Voltage Vgs Rds on Measurement: 4.5V
Dual N/P Channel Mosfet, 25V, Sc-70; Transistor, Polaridad:Canal N Y P; Intensidad Drenador Continua Id:500Ma; Tensión Drenaje-Fuente Vds:25V; Resistencia De Activación Rds(On):450Mohm; Tensión Vgs De Medición Rds(On):4.5V |Onsemi FDG6321C
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Especificaciones técnicas
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)500 mA
Current Rating500 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time8 ns
Schedule B8541210080
Threshold Voltage800 mV
Turn-Off Delay Time55 ns
Dimensions
Height1.1 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento