onsemi FDFMA3N109
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FDFMA3N109 | 75.000 | 7d | |||||||||
| Avnet | FDFMA3N109 | 0 | 2500 | 1d | ||||||||
| element14 APAC | FDFMA3N109 | 0 | 1 | Cut Tape | 20h | |||||||
| Farnell | FDFMA3N109 | 0 | 1 | Cut Tape | 7h | |||||||
| Microchip USA | FDFMA3N109 | 1204 | 3500 | 1h |
Historial de existencias
Tendencia de 3 meses: -3.85%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 SnapEDA | Footprint | Descargar |
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Cadena de suministros
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-05-26
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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Descripciones
Descripciones de onsemi FDFMA3N109 suministradas por sus distribuidores.
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
30V,2.9A ,INTEGRATED, NCH POWER MOSFET & SCHOTTKY DIODE
Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET EP T/R
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.5W 12V 1.5V@ 250¦ÌA 3nC@ 4.5V 1N 30V 123m¦¸@ 2.9A,4.5V 2.9A 220pF@15V MICROFET-6 2mm*2mm*780¦Ìm
MOSFET N-CH 30V 2.9A 6MICROFET
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -3.85%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight60 mg
Technical
Continuous Drain Current (ID)2.9 A
Current Rating2.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance123 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance220 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation1.5 W
Rds On Max123 mΩ
Resistance123 MΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time12 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)30 V
Dimensions
Height750 µm
Length2 mm
Width2 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento