onsemi BC846BPDW1T1G
$ 0.051
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BC846BPDW1T1G | 2.040.000 | 50K | 17h | ||||||||
| Newark | BC846BPDW1T1G | 4359 | 5 | Cut Tape | ||||||||
| Verical | BC846BPDW1T1G | 24.000 | 3K | |||||||||
| Arrow Electronics | BC846BPDW1T1G | 13.689 | 1 | |||||||||
| Future Electronics | BC846BPDW1T1G | 48.000 | 3K | Tape & Reel |
Historial de existencias
Tendencia de 3 meses: -1.51%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BC846BPDW1T1G.
Modelos CAD
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Componentes alternativos
Este componente
Componentes alternativos
Price @ 1000
$ 0.051
$ 0.033
Stock
51,112,114
385,912
Authorized Distributors
6
2
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Polarity
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
65 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
650 mV
600 mV
hFE Min
200
200
Power Dissipation
380 mW
380 mW
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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ON Semi BC856BDW1T3G Dual PNP Bipolar Transistor; 0.1 A; 65 V; 6-Pin SOT-363
Descripciones
Descripciones de onsemi BC846BPDW1T1G suministradas por sus distribuidores.
Bipolar Transistor Array, Complementary NPN and PNP, 65 V, 65 V, 100 mA, 100 mA, 380 mW
Bipolar Transistors (BJT); BC846BPDW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 65 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC846 Series 65 V 100 mA SMT NPN/PNP Complementary Transistor - SOT-363
600mV@ 5mA,100mA 1 NPN,1 PNP 380mW 6V@ NPN,5V@ PNP 15nA 80V 65V 100mA SOT-363 2mm*1.25mm*1.1mm
General Purpose Transistors NPN,PNP Ic=100mA Vceo=65V hfe=200~475 P=380mW SOT363
100 mA 65 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Trans GP BJT NPN/PNP 65V 0.1A 380mW 6-Pin SC-88 T/R
65V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 100mA 80V Dual Complementary
Transistors - Bipolar (BJT) - Arrays 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) 1 (Unlimited) Surface Mount NPN, PNP -55°C~150°C TJ 600mV @ 5mA, 100mA 200 @ 2mA 5V 15nA ICBO TRANS NPN/PNP 65V 0.1A SOT363
TRANSISTOR, BIPOL, NPN/PNP, 65V, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Transistor Npn/Pnp Dual 65V Sot-363, Full Reel; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max Npn:65V; Collector Emitter Voltage Max Pnp:65V; Continuous Collector Current Npn:100Ma; Power Dissipation Npn:380Mw Rohs Compliant: Yes |Onsemi BC846BPDW1T1G.
Alias de fabricantes
onsemi tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. onsemi también podría ser conocido por los siguientes nombres:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Historial de existencias
Tendencia de 3 meses: -1.51%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
1 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)65 V
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityNPN, PNP
Power Dissipation380 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)65 V
Dimensions
Height990.6 µm
Length2.1844 mm
Width1.3462 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para onsemi BC846BPDW1T1G.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento