Infineon IRLML6401TRPBF

Transistor: P-MOSFET; unipolar; -12V; -4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
$ 0.141
EOL
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Precio y existencias

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DistributorSKUMinPkg
Avnet
2
IRLML6401TRPBF291.0003K
2d
Newark
2
IRLML6401TRPBF21.3681Cut Tape
Future Electronics
2
IRLML6401TRPBF3.180.0003KTape & Reel
Arrow Electronics
2
IRLML6401TRPBF204.2331
Rochester ElectronicsIRLML6401TRPBF17.700
1d

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRLML6401TRPBF.

Newark

Datasheet10 páginasHace 12 años
Datasheet9 páginasHace 12 años

IHS

Upverter

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TME

Historial de existencias

Tendencia de 3 meses:
-21.10%
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Componentes alternativos

Este componente
Componentes alternativos
InfineonIRLML6401TRPBF
InfineonIRLML6401GTRPBF
Price @ 1000
$ 0.141
$ 0.044
Stock
30,357,460
293,395
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
TO-236-3
Drain to Source Voltage (Vdss)
-12 V
-12 V
Continuous Drain Current (ID)
4.3 A
4.3 A
Threshold Voltage
-550 mV
-550 mV
Rds On Max
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
830 pF
830 pF

Cadena de suministros

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-09-01
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2026-06-30
LTD Date2027-12-31

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Descripciones

Descripciones de Infineon IRLML6401TRPBF suministradas por sus distribuidores.

Transistor: P-MOSFET; unipolar; -12V; -4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
Maritex
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.05Ohm;ID -4.3A;Micro3;PD 1.3W;VGS +/-8V
RS (Formerly Allied Electronics)
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount
Avnet
Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
Win Source
Single P-Channel 12 V 0.05 Ohm 10 nC SMT HEXFET® Power Mosfet - MICRO-3
Future Electronics
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Jak Electronics
Mosfet, P Channel, -12V, -4.3A, Sot-23-3, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:1.3W Rohs Compliant: Yes |Infineon Technologies IRLML6401TRPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.55V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:34A; Power Dissipation:1.3W; Power, Pd:1.3W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 10V:0.05ohm; Thermal Resistance, Junction to Case A:100°C/W; Voltage, Vds Max:12V; Voltage, Vgs th Min:-0.4V; Width, Tape:8mm
Farnell
MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-550mV; Power Dissipation Pd:1.3W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.3A; Package / Case:Micro3; Power Dissipation Pd:1.3W; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-550mV; Voltage Vgs Rds on Measurement:-4.5V
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Imágenes

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TME
Farnell
element14
TME
South Microelectronics
DKO Electronshik
Jameco
LCSC
iiiC
Conrad
Future Electronics

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IRFIRLML6401TRPBF
  • IRLML 6401
  • IRLML6401
  • IRLML6401TR/PBF
  • IRLML6401TRPBF.
  • SP001577044