Infineon IRLML2502TRPBF

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
$ 0.119
EOL
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
AvnetIRLML2502TRPBF189.0003K
2d
Future Electronics
2
IRLML2502TRPBF444.0003KTape & Reel
Arrow ElectronicsIRLML2502TRPBF51
Rochester ElectronicsIRLML2502TRPBF50
22h
NewarkIRLML2502TRPBF06KTape & Reel

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRLML2502TRPBF.

IHS

Datasheet9 páginasHace 12 años
Datasheet9 páginasHace 23 años

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Historial de existencias

Tendencia de 3 meses:
-11.67%
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Componentes alternativos

Este componente
Componentes alternativos
InfineonIRLML2502TRPBF
InfineonIRLML2502PBF
Price @ 1000
$ 0.119
$ 0.126
Stock
15,725,450
207,162
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
4.2 A
4.2 A
Threshold Voltage
1.2 V
1.2 V
Rds On Max
45 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.25 W
1.25 W
Input Capacitance
740 pF
740 pF

Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusEOL (Last Updated: 4 months ago)

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Descripciones

Descripciones de Infineon IRLML2502TRPBF suministradas por sus distribuidores.

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
Maritex
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS +/-12V
RS (Formerly Allied Electronics)
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 20 V, 4.2 A, 0.045 ohm, SOT-23, Surface Mount
Avnet
Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
Win Source
HEXFET Power MOSFET Small Signal Field-Effect Transistor
ComSIT Distribution GmbH
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Semicontronic
MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Package / Case:Micro3; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:4.5V
element14 APAC
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:33A; Current, Idss Max:1.0µA; External Depth:2.5mm; External Length / Height:1.12mm; N-channel Gate Charge:12nC; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:1G; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:26s; Time, Rise:10ns; Time, trr Typ:16ns; Transistors, No. of:1; Typ Capacitance Ciss:740pF; Typ Charge Qrr @ Tj = 25°C:8.6nC; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.6V; Width, External:3.05mm; Width, Tape:8mm
Farnell

Imágenes

element14 APAC
RS
element14 APAC
element14 APAC
TME
element14
TME
South Microelectronics
DKO Electronshik
Micros
Jameco
LZChips
Conrad
Future Electronics
SOS electronic

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IRFIRLML2502TRPBF
  • IRLML 2502
  • IRLML-2502
  • IRLML2502
  • IRLML2502 TRPBF
  • IRLML2502-TRPBF
  • IRLML2502TR/PBF
  • IRLML2502TRPBF.
  • IRLML2502TRPBF..
  • SP001558336